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FDM606P

July 2002

FDM606P

P-Channel 1.8V Logic Level Power Trench

廬

MOSFET

General Description

This P-Channel MOSFET is produced using Fairchild

Semiconductor鈥檚 advanced PowerTrench process that has

been especially tailored to minimize the on-state resistance

and yet maintain low gate charge for superior switching

performance. These devices are well suited for portable

electronics applications.

Features

鈥?Fast switching

鈥?r

DS(ON)

= 0.026鈩?(Typ), V

GS

= -4.5V

鈥?r

DS(ON)

= 0.033鈩?(Typ), V

GS

= -2.5V

鈥?r

DS(ON)

= 0.052鈩?(Typ), V

GS

= -1.8V

Applications

鈥?Load switch

鈥?Battery charge

鈥?Battery disconnect circuits

D

Bottomview 3 X 2 (8 Lead)

SinglePad

ShortPin

D

G

D

1

2

8

7

6

5

1

D

3

4

S

MicroFET 3x2-8

MOSFET Maximum Ratings

T

A

=25擄C unless otherwise noted

Symbol

V

DSS

V

GS

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Continuous (T

C

= 25

o

C, V

GS

= - 4.5V)

I

D

Continuous (T

C

= 100 C, V

GS

= - 2.5V)

Continuous (T

C

= 100 C, V

GS

= -1.8V)

Pulsed

P

D

T

J

, T

STG

Power dissipation

Derate above 25擄C

Operating and Storage Temperature

o

Parameter

Ratings

-20

鹵8

-6.8

-3.8

-3.0

Figure 4

1.92

15.4

-55 to 150

Units

V

A

W

mW/

o

C

o

C

Thermal Characteristics

R

胃JC

R

胃JA

Thermal Resistance Junction to Case (Note1)

Thermal Resistance Junction to Ambient (Note 2)

6.0

65

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking

.06P

Device

FDM606P

Package

MicroFET3x2

Reel Size

178 mm

Tape Width

8 mm

Quantity

3000

漏2002 Fairchild Semiconductor Corporation

FDM606P Rev. C

標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET P 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
20V
電流 - 連續(xù)漏極(Id) @ 25° C
6.8A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
30 毫歐 @ 6.8A，4.5V
Id 時的 Vgs(th)（最大）
1.5V @ 250µA
閘電荷(Qg) @ Vgs
30nC @ 4.5V
輸入電容 (Ciss) @ Vds
2200pF @ 10V
功率 - 最大
1.92W
安裝類型
表面貼裝
封裝/外殼
8-MLP，MicroFET?
供應(yīng)商設(shè)備封裝
8-MLP，MicroFET（3x2）
包裝
帶卷 (TR)

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