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FDM2452NZ Datasheet

  • FDM2452NZ

  • Monolithic Common Drain N-Channel 2.5V Specified PowerTrench...

  • 6頁

  • FAIRCHILD

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FDM2452NZ
July 2005
FDM2452NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
廬
MOSFET
General Description
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor鈥檚 advanced Power
Trench process to optimize the R
DS(ON)
@ V
GS
= 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Features
鈥?/div>
8.1 A, 30 V
R
DS(ON)
= 21 m鈩?@ V
GS
= 4.5 V
R
DS(ON)
= 25 m鈩?@ V
GS
= 2.5 V
鈥?/div>
ESD protection Diode(note 3)
鈥?/div>
Low Profile 鈥?0.8 mm maximum 鈥?in the new
package MicroFET 2 x 5 mm
Applications
鈥?/div>
Li-Ion Battery Pack
PIN 1
S1 S1 G1
G2
Bottom Drain Contact
4
Q2
3
G1
S2
5
6
2
1
S1
S2
S2 S2 G2
Q1
Bottom Drain Contact
S1
MLP 2x5
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
A
=25
o
C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current 鈥?Continuous
鈥?Pulsed
Power Dissipation (Steady State)
Ratings
30
鹵12
8.1
30
2.2
0.8
鈥?5 to +150
Units
V
V
A
W
擄C
(Note 1a)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
55
145
擄C/W
Package Marking and Ordering Information
Device Marking
2452Z
Device
FDM2452NZ
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
3000 units
漏2005
Fairchild Semiconductor Corporation
FDM2452NZ Rev C1

FDM2452NZ 產(chǎn)品屬性

  • Fairchild Semiconductor

  • MOSFET

  • N-Channel

  • 30 V

  • +/- 12 V

  • 8.1 A

  • 0.021 Ohms

  • Dual Dual Source Common Drain

  • + 150 C

  • SMD/SMT

  • MLP-6

  • Reel

  • 8.7 ns

  • 46 S

  • - 55 C

  • 2.2 W

  • 10 ns

  • 3000

  • 30 ns

  • FDM2452NZ_NL

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