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FDH700

ULTRA FAST DIODE

DISCRETE POWER AND SIGNAL

TECHNOLOGIES

Information Only Data Sheet

FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY

Absolute Maximum Ratings

(note 1)

Parameter

Storage Temperature

Maximum Junction Temperature

Total Power Dissipation at 25

O

C

Derate above 25

O

C

Working Inverse Voltage

DC Forward Current

0.500

Minimum

12.70

Typ 1.000

CATHODE

BAND

LOGO

FD

H7

00

0.022 (0.558)

Diameter

0.018 (0.458)

Typ 20 mils

0.200 (5.08)

0.120 (3.05)

TA = 25

O

C unless otherwise noted

Value

-65 to +200

-65 to +175

250

1.67

20

150

Units

O

O

C

C

mW

mW/

O

C

V

mA

Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

0.090 (2.28)

Diameter

0.060 (1.53)

Electrical Characteristics

SYM

B

V

I

R

V

F

TA = 25

O

C unless otherwise noted

CHARACTERISTICS

Breakdown Voltage

Reverse Leakage

Forward Voltage

MIN

30

MAX

UNITS

V

I

R

TEST CONDITIONS

=

5.0 uA

20 V

20 V T

A

= 150

O

C

10 uA

100 uA

1.0 mA

10 mA

20 mA

50 mA

50

50

420

520

640

760

810

0.89

500

610

740

900

990

1.25

900

nA

uA

mV

mV

mV

mV

mV

V

ps

V

R

=

V

R

=

I

F

I

F

I

F

I

F

I

F

I

F

=

=

=

=

=

=

T

RR

C

T

Reverse Recovery Time

I

F

= I

R

= 10 mA I

RR

= 1.0 mA

R

Loop

= 100 Ohm

V

R

=

0 V, f = 1.0 MHz

FDH700 - Rev. A

Diode Capacitance

1.5

pF

漏 1999 Fairchild Semiconductor Corporation

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