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FDH3632 Datasheet

  • FDH3632

  • N-Channel PowerTrench MOSFET

  • 302.59KB

  • 11頁

  • FAIRCHILD

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FDB3632 / FDP3632 / FDI3632 / FDH3632
November 2004
FDB3632 / FDP3632 / FDI3632 / FDH3632
N-Channel PowerTrench
廬
MOSFET
100V, 80A, 9m鈩?/div>
Features
鈥?r
DS(ON)
= 7.5m鈩?(Typ.), V
GS
= 10V, I
D
= 80A
鈥?Q
g
(tot) = 84nC (Typ.), V
GS
= 10V
鈥?Low Miller Charge
鈥?Low Q
RR
Body Diode
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
鈥?Qualified to AEC Q101
Applications
鈥?DC/DC converters and Off-Line UPS
鈥?Distributed Power Architectures and VRMs
鈥?Primary Switch for 24V and 48V Systems
鈥?High Voltage Synchronous Rectifier
鈥?Direct Injection / Diesel Injection Systems
鈥?42V Automotive Load Control
鈥?Electronic Valve Train Systems
S
G
DRAIN
(FLANGE)
DRAIN
(FLANGE)
S
D
G
G
S
DRAIN
(FLANGE)
SD
D
D
G
DRAIN
G
TO-220AB
FDP SERIES
Symbol
V
DSS
V
GS
TO-263AB
FDB SERIES
Parameter
TO-262AB
FDI SERIES
TO-247
FDH SERIES
Ratings
100
鹵20
80
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
C
< 111
o
C, V
GS
= 10V)
Continuous (T
amb
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Units
V
V
A
A
A
mJ
W
W/
o
C
o
C
25
o
C,
V
GS
= 10V, R
胃JA
=
43
o
C/W)
12
Figure 4
393
310
2.07
-55 to 175
Operating and Storage Temperature
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-220, TO-263, TO-262,
TO-247
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
Thermal Resistance Junction to Ambient TO-247 (Note 2)
0.48
62
43
30
o
C/W
o
C/W
o
o
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
漏2004 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C1

FDH3632 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 150

  • 分離式半導體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 100V

  • 80A

  • 9 毫歐 @ 80A，10V

  • 4V @ 250µA

  • 110nC @ 10V

  • 6000pF @ 25V

  • 310W

  • 通孔

  • TO-247-3

  • TO-247

  • 管件

  • FDH3632-NDFDH3632FS

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