FDG6332C
September 2003
FDG6332C
20V N & P-Channel PowerTrench
廬
MOSFETs
General Description
The N & P-Channel MOSFETs are produced using
Fairchild Semiconductor鈥檚 advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
Features
鈥?/div>
Q1
0.7 A, 20V.
R
DS(ON)
= 300 m鈩?@ V
GS
= 4.5 V
R
DS(ON)
= 400 m鈩?@ V
GS
= 2.5 V
鈥?/div>
Q2
鈥?.6 A, 鈥?0V.
R
DS(ON)
= 420 m鈩?@ V
GS
= 鈥?.5 V
R
DS(ON)
= 630 m鈩?@ V
GS
= 鈥?.5 V
鈥?/div>
Low gate charge
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
SC70-6 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Load switch
鈥?/div>
LCD display inverter
S
G
D
D
Pin 1
1
2
3
Complementary
6
5
4
G
S
SC70-6
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Q1
20
鹵12
(Note 1)
Q2
鈥?0
鹵12
鈥?.6
鈥?
0.3
鈥?5 to +150
Units
V
V
A
W
擄C
0.7
2.1
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
擄C/W
Package Marking and Ordering Information
Device Marking
.32
Device
FDG6332C
Reel Size
7鈥欌€?/div>
Tape width
8mm
Quantity
3000 units
漏2003
Fairchild Semiconductor Corporation
FDG6332C Rev C2 (W)
FDG6332C相關(guān)型號PDF文件下載
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