March 1999
FDG6323L
Integrated Load Switch
General Description
This device is particularly suited for compact
power management in portable electronic
equipment where 2.5V to 8V input and 0.6A
output current capability are needed. This load
switch integrates a small N-Channel power
MOSFET (Q1) which drives a large P-Channel
power MOSFET (Q2) in one tiny SC70-6
package.
Features
V
D
ROP
=0.2V @ V
IN
=5V, I
L
=0.36A. R
(ON)
= 0.55
鈩?/div>
V
DROP
=0.2V @ V
IN
=2.5V, I
L
=0.27A. R
(ON)
= 0.75
鈩?
Very small package outline SC70-6.
Control MOSFET (Q1) includes Zener protection for ESD
ruggedness
(>6KV Human Body Model).
High density cell design for extremely low
on-resistance.
Compact industry standard SC70-6 surface mount package.
SC70-6
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
V
IN
, R
1
4
Q2
3
V
OUT
, C
1
EQUIVALENT APPLICATION
.23
V
ON/OFF
5
Q1
2
V
OUT
, C
1
IN
+
V
DROP
-
OUT
pin
1
R
1
, C
1
6
See Application Circuit
1
R
2
ON/OFF
SC70-6
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25擄C unless otherwise noted
FDG6323L
Units
V
IN
V
ON/OFF
I
L
Input Voltage Range
On/Off Voltage Range
Load Current
- Continuous
- Pulsed
(Note 1)
(Note 1 & 3)
(Note 2)
2.5 - 8
1.5 - 8
0.6
1.8
0.3
-55 to 150
6
V
V
A
P
D
T
J
,T
STG
ESD
Maximum Power Dissipation
W
擄C
kV
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)
THERMAL CHARACTERISTICS
R
胃JA
Thermal Resistance, Junction-to-Ambient
(Note 2)
415
擄C/W
漏 1999 Fairchild Semiconductor Corporation
FDG6323L Rev.C
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