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FDG6317NZ Datasheet

  • FDG6317NZ

  • Dual 20v N-Channel PowerTrench MOSFET

  • 139.78KB

  • 5頁

  • FAIRCHILD

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FDG6317NZ
January 2004
FDG6317NZ
Dual 20v N-Channel PowerTrench
廬
MOSFET
General Description
This dual N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low R
DS(ON)
and gate charge (Q
G
) in a small package.
Features
鈥?/div>
0.7 A, 20 V.
R
DS(ON)
= 400 m鈩?@ V
GS
= 4.5 V
R
DS(ON)
= 550 m鈩?@ V
GS
= 2.5 V
鈥?/div>
ESD protection diode (note 3)
鈥?/div>
Low gate charge
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
Compact industry standard SC70-6 surface mount
package
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Power management
鈥?/div>
Loadswitch
S
G
D
D
G
Pin 1
S
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
20
鹵
12
(Note 1)
Units
V
V
A
W
擄C
0.7
2.1
0.3
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
擄C/W
Package Marking and Ordering Information
Device Marking
.67
Device
FDG6317NZ
Reel Size
7鈥欌€?/div>
Tape width
8mm
Quantity
3000 units
漏2004
Fairchild Semiconductor Corporation
FDG6317NZ Rev B (W)

FDG6317NZ 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 陣列

  • PowerTrench®

  • 2 個(gè) N 溝道（雙）

  • 邏輯電平門

  • 20V

  • 700mA

  • 400 毫歐 @ 700mA，4.5V

  • 1.5V @ 250µA

  • 1.1nC @ 4.5V

  • 66.5pF @ 10V

  • 300mW

  • 表面貼裝

  • 6-TSSOP，SC-88，SOT-363

  • SC-70-6

  • 帶卷 (TR)

  • FDG6317NZ-NDFDG6317NZTR

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