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FDG313N

July 2000

FDG313N

Digital FET, N-Channel

General Description

This N-Channel enhancement mode field effect

transistor is produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state

resistance. This device has been designed especially

for low voltage applications as a replacement for

bipolar digital transistor and small signal MOSFET.

Features

鈥?/div>

0.95 A, 25 V. R

DS(on)

= 0.45

鈩?/div>

@ V

GS

= 4.5 V

R

DS(on)

= 0.60

鈩?/div>

@ V

GS

= 2.7 V.

鈥?/div>

Low gate charge (1.64 nC typical)

Very low level gate drive requirements allowing direct

operation in 3V circuits (V

GS(th)

< 1.5V).

Gate-Source Zener for ESD ruggedness

(>6kV Human Body Model).

Compact industry standard SC70-6 surface mount

package.

Applications

鈥?/div>

Load switch

鈥?/div>

Battery protection

鈥?/div>

Power management

D

S

1

6

2

5

1

SC70-6

D

G

3

4

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

I

D

P

D

Drain-Source Voltage

Gate-Source Voltage

Drain Current

- Continuous

- Pulsed

T

A

= 25擄C unless otherwise noted

Parameter

FDG313N

25

(Note 1a)

Units

V

A

W

鹵

8

0.95

2

0.75

0.55

0.48

-55 to +150

6

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

T

J

, T

stg

ESD

Operating and Storage Junction Temperature Range

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

擄

C

kV

Thermal Characteristics

R

胃

JA

Thermal Resistance, Junction-to-Ambient

(Note 1c)

260

擄

C/W

Package Outlines and Ordering Information

Device Marking

.

13

錚?998

Fairchild Semiconductor Corporation

Device

FDG313N

Reel Size

7鈥欌€?/div>

Tape Width

8mm

Quantity

3000 units

FDG313N Rev. C

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
3,000
類(lèi)別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門(mén)
漏極至源極電壓(Vdss)
25V
電流 - 連續(xù)漏極(Id) @ 25° C
950mA
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
450 毫歐 @ 500mA，4.5V
Id 時(shí)的 Vgs(th)（最大）
1.5V @ 250µA
閘電荷(Qg) @ Vgs
2.3nC @ 4.5V
輸入電容 (Ciss) @ Vds
50pF @ 10V
功率 - 最大
480mW
安裝類(lèi)型
表面貼裝
封裝/外殼
6-TSSOP，SC-88，SOT-363
供應(yīng)商設(shè)備封裝
SC-70-6
包裝
帶卷 (TR)
其它名稱
FDG313N-NDFDG313NFSTR

FDG313N相關(guān)型號(hào)PDF文件下載

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FDG313N Datasheet

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