October 2001
FDFS6N303
N-Channel MOSFET with Schottky Diode
General Description
Fairchild Semiconductor's FETKEY technology incorporates
a high cell density MOSFET and low forward drop (0.35V)
Schottky diode into a single surface mount power package.
The MOSFET and Schottky diode are isolated inside the
package. The general purpose pinout has been chosen to
maximize flexibility and ease of use. FETKEY products are
particularly suited for switching applications such as DC/DC
buck, boost, synchronous, and non-synchronous converters
where the MOSFET is driven as low as 4.5V and fast
switching, high efficiency and small PCB footprint
is
desirable.
Features
6 A, 30 V. R
DS(ON)
= 0.035
鈩?/div>
@ V
GS
= 10 V.
R
DS(ON)
= 0.050
鈩?/div>
@ V
GS
= 4.5 V.
V
F
< 0.28 V @ 0.1 A
V
F
< 0.42 V @ 3 A
V
F
< 0.50 V @ 6 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
General purpose pinout for design flexibility.
Ideal for DC/DC converter applications.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D
C
C
D
A
A
S
1
2
3
4
8
7
6
5
C
C
D
D
S
DF 03
F 3
6N
G
A
S
G
SO-8
pin
1
A
MOSFET Maximum Ratings
Symbol
Parameter
T
A
= 25
o
C unless otherwise noted
FDFS6N303
Units
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1c)
(Note 1a)
30
鹵20
6
30
2
1.6
0.9
-55 to 150
V
V
A
W
T
J
,T
STG
Operating and Storage Temperature Range
T
A
= 25
o
C unless otherwise noted
擄C
Schottky Diode Maximum Ratings
V
RRM
I
O
Repetitive Peak Reverse Voltage
Average Forward Current
30
(Note 1a)
V
A
2
漏 2001 Fairchild Semiconductor Corporation
FDFS6N303 Rev. D1
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