餂?/div>
MOSFET and Schottky Diode
General Description
The
FDFS2P103A
combines
the
exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance.
The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
鈥?/div>
鈥?.3 A, 鈥?0V R
DS(ON)
= 59 m鈩?@ V
GS
= 鈥?0 V
R
DS(ON)
= 92 m鈩?@ V
GS
= 鈥?.5 V
鈥?/div>
V
F
< 0.35 V @ 1 A (T
J
= 125擄C)
V
F
< 0.25 V @ 1 A (T
J
= 25擄C)
鈥?/div>
Schottky and MOSFET incorporated into single
power surface mount SO-8 package
鈥?/div>
Electrically independent Schottky and MOSFET
pinout for design flexibility
D
D
C
C
A
1
A
2
G
S
A
8
C
7
C
6
D
5
D
S
3
G
4
SO-8
Pin 1
A
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Parameter
(Note 1a)
Ratings
鈥?/div>
30
鹵
25
鈥?/div>
5.3
鈥?/div>
20
2
1.6
1
0.9
Units
V
V
A
W
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
V
RRM
I
O
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
鈥?/div>
55 to +150
30
1
擄C
V
A
Package Marking and Ordering Information
Device Marking
FDFS2P103A
Device
FDFS2P103A
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
餂?002
Fairchild Semiconductor Corporation
FDFS2P103A Rev C (W)
FDFS2P103A相關(guān)型號(hào)PDF文件下載
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