FDFS2P102
October 2000
FDFS2P102
Integrated P-Channel MOSFET and Schottky Diode
General Description
The FDFS2P102 combines the exceptional performance of
Fairchild's high cell density MOSFET with a very low forward
voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a variety
of DC/DC converter topologies.
Features
鈥?/div>
鈥?/div>
鈥?.3 A, 鈥?0 V.
R
DS(ON)
= 0.125
鈩?/div>
@ V
GS
= 鈥?0 V
R
DS(ON)
= 0.200
鈩?/div>
@ V
GS
= 鈥?.5 V.
VF < 0.39 V @ 1 A (TJ = 125 oC).
VF < 0.47 V @ 1 A.
VF < 0.58 V @ 2 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
Electrically independent Schottky and MOSFET pinout for
design flexibility.
鈥?/div>
鈥?/div>
Applications
鈥?/div>
鈥?/div>
鈥?/div>
DC/DC converters
Load Switch
Motor Drives
D
D
C
C
A
1
A
2
G
S
A
8
7
C
C
S
3
G
4
6
D
5
D
Pin 1
A
T
A
=25
o
C unless otherwise noted
MOSFET Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
Ratings
-20
鹵
20
(Note 1a)
Units
V
V
A
W
-3.3
-20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
-55 to +150
擄
C
T
J
, T
STG
Operating and Storage Temperature Range
T
A
=25 C unless otherwise noted
o
Schottky Diode Maximum Ratings
V
RRM
I
O
Repetitive Peak Reverse Voltage
Average Forward Current
20
(Note 1a)
V
A
1
Package Marking and Ordering Information
Device Marking
FDFS2P102
Device
FDFS2P102
Reel Size
13
Tape Width
12mm
Quantity
2500 units
錚?000
Fairchild Semiconductor International
FDFS2P102 Rev. E
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