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FDFS2P102A Datasheet

  • FDFS2P102A

  • Integrated P-Channel PowerTrench MOSFET and Schottky Diode

  • 6頁

  • FAIRCHILD

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FDFS2P102A
August 2001
FDFS2P102A
Integrated P-Channel PowerTrench
餂?/div>
MOSFET and Schottky Diode
General Description
The
FDFS2P102A
combines
the
exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance.
The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
鈥?/div>
鈥?.3 A, 鈥?0V R
DS(ON)
= 125 m鈩?@ V
GS
= 鈥?0 V
R
DS(ON)
= 200 m鈩?@ V
GS
= 鈥?.5 V
鈥?/div>
V
F
< 0.39 V @ 1 A (T
J
= 125擄C)
V
F
< 0.47 V @ 1 A
V
F
< 0.58 V @ 2 A
鈥?/div>
Schottky and MOSFET incorporated into single
power surface mount SO-8 package
鈥?/div>
Electrically independent Schottky and MOSFET
pinout for design flexibility
D
C
C
D
A
1
A
2
G
8
C
7
C
6
D
5
D
S
3
G
4
SO-8
Pin 1
S
A
A
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
鈥?/div>
20
鹵20
(Note 1a)
Units
V
V
A
W
鈥?/div>
3.3
鈥?/div>
10
2
1.6
1
0.9
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
V
RRM
I
O
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
鈥?/div>
55 to +150
20
1
擄C
V
A
Package Marking and Ordering Information
Device Marking
FDFS2P102A
Device
FDFS2P102A
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
餂?001
Fairchild Semiconductor Corporation
FDFS2P102A Rev A1(W)

FDFS2P102A 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET P 通道，金屬氧化物

  • 二極管（隔離式）

  • 20V

  • 3.3A

  • 125 毫歐 @ 3.3A，10V

  • 3V @ 250µA

  • 3nC @ 5V

  • 182pF @ 10V

  • 900mW

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

  • FDFS2P102ATRFDFS2P102A_NLFDFS2P102A_NLTRFDFS2P102A_NLTR-ND

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