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FDFMA2P853 Datasheet

  • FDFMA2P853

  • Integrated P-Channel PowerTrench MOSFET and Schottky Diode

  • 7頁

  • FAIRCHILD

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FDFMA2P853 Integrated P-Channel PowerTrench
廬
MOSFET and Schottky Diode
August 2005
FDFMA2P853
Integrated P-Channel PowerTrench
廬
MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
Features
MOSFET:
-3.0 A, -20V. R
DS(ON)
= 120 m鈩?@ V
GS
= -4.5 V
R
DS(ON)
= 160 m鈩?@ V
GS
= -2.5 V
R
DS(ON)
= 240 m鈩?@ V
GS
= -1.8 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
Schottky:
V
F
< 0.46 V @ 500 mA
PIN
A
C
NC D
A
D
NC
D
1
2
3
6
5
4
C
G
S
MicroFET
Symbol
V
DSS
V
GSS
I
D
V
RRM
I
O
P
D
T
J
, T
STG
Absolute Maximum Ratings
T
A
= 25擄C unless otherwise noted
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current -Continuous
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation for Single Operation
Power dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
Ratings
-20
鹵8
-2.2
-6
20
1
1.4
0.7
-55 to +150
Units
V
V
A
V
A
W
o
C
G
S
C
Thermal Characteristics
R
胃JA
R
胃JA
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
86
140
o
C/W
Package Marking and Ordering Information
Device Marking
.853
Device
FDFMA2P853
Reel Size
7inch
1
Tape Width
8mm
Quantity
3000 units
FDFMA2P853 Rev. C (W)
漏2005 Fairchild Semiconductor Corporation

FDFMA2P853 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET P 通道，金屬氧化物

  • 二極管（隔離式）

  • 20V

  • 3A

  • 120 毫歐 @ 3A，4.5V

  • 1.3V @ 250µA

  • 6nC @ 4.5V

  • 435pF @ 10V

  • 700mW

  • 表面貼裝

  • 6-WDFN 裸露焊盤

  • 6-MicroFET（2x2）

  • 帶卷 (TR)

  • FDFMA2P853FSTRFDFMA2P853TRFDFMA2P853TR-ND

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