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FDFMA2P029Z_08 Datasheet

  • FDFMA2P029Z_08

  • Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode...

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FDFMA2P029Z Integrated P-Channel PowerTrench
廬
MOSFET and Schottky Diode
March
2008
FDFMA2P029Z
Integrated P-Channel PowerTrench
廬
MOSFET and Schottky Diode
鈥?0V, 鈥?.1A, 95m:
Features
MOSFET
聞
Max r
DS(on)
= 95m: at V
GS
= 鈥?.5V, I
D
= 鈥?.1A
聞
Max r
DS(on)
= 141m: at V
GS
= 鈥?.5V, I
D
= 鈥?.5A
聞
HBM ESD protection level > 2.5kV (Note 3)
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features a MOSFET with very low on-
state resistance and an independently connected low forward
voltage schottky diode allows for minimum conduction losses.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
Schottky
聞
V
F
< 0.37V @ 500mA
聞
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
聞
RoHS Compliant
Pin 1
A
NC
D
A 1
NC 2
D 3
MicroFET 2X2
C
G
S
6 C
5 G
4 S
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DS
V
GS
I
D
P
D
T
J
, T
STG
V
RRM
I
O
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
(Note 1b)
(Note 1a)
Parameter
Ratings
鈥?0
鹵12
鈥?.1
-6
1.4
0.7
鈥?5 to +150
20
2
Units
V
V
A
W
擄C
V
A
Thermal Characteristics
R
TJA
R
TJA
R
TJA
R
TJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
86
140
擄C/W
Package Marking and Ordering Information
Device Marking
.P29
Device
FDFMA2P029Z
Package
MicroFET 2X2
1
Reel Size
7鈥?/div>
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
漏2008 Fairchild Semiconductor Corporation
FDFMA2P029Z Rev.B1

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