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FDFMA2N028Z_08 Datasheet

  • FDFMA2N028Z_08

  • Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode...

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FDFMA2N028Z Integrated N-Channel PowerTrench
廬
MOSFET and Schottky Diode
March
2008
FDFMA2N028Z
20V, 3.7A, 68m惟
Features
MOSFET
Integrated N-Channel PowerTrench
廬
MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package solution
for a boost topology in cellular handset and other ultra-portable
applications. It features a MOSFET with low on-state resistance,
and an independently connected schottky diode with low forward
voltage.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.
Max r
DS(on)
= 68m惟 at V
GS
= 4.5V, I
D
= 3.7A
Max r
DS(on)
= 86m惟 at V
GS
= 2.5V, I
D
= 3.3A
HBM ESD protection level > 2kV (Note 3)
Schottky
V
F
< 0.37V @ 500mA
Low profile - 0.8 mm maximum - in the new package MicroFET
2x2 mm
RoHS Compliant
Application
DC - DC Conversion
Pin 1
A
NC
D
A 1
NC 2
D 3
C
MicroFET 2X2
G
S
6 C
5 G
4 S
MOSFET Maximum Ratings
T
J
= 25擄C unless otherwise noted
Symbol
V
DS
V
GS
I
D
P
D
T
J
, T
STG
V
RR
I
O
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
(Note 1b)
(Note 1a)
Parameter
Ratings
20
鹵12
3.7
6
1.4
0.7
-55 to +150
20
2
Units
V
V
A
W
擄C
V
A
Thermal Characteristics
R
胃JA
R
胃JA
R
胃JA
R
胃JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
86
140
擄C/W
Package Marking and Ordering Information
Device Marking
.N28
Device
FDFMA2N028Z
Package
MicroFET 2X2
1
Reel Size
7鈥欌€?/div>
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
漏2008 Fairchild Semiconductor Corporation
FDFMA2N028Z Rev.B1

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