鈻?/div>
Low Pro鏗乴e 鈥?0.8mm maximum 鈥?in the new package
MicroFET 3x3 mm
General Description
FDFM2P110 combines the exceptional performance of Fairchild鈥檚
PowerTrench MOSFET technology with a very low forward voltage
drop Schottky barrier recti鏗乪r in a MicroFET package.
This device is designed speci鏗乧ally as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance.
Applications
鈻?/div>
DC-DC Converter
Pin 1
1
2
3
6
5
4
Top
Bottom
MLP 3x3
Absolute Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
V
RRM
I
O
P
D
T
J
, T
STG
R
胃
JA
R
胃
JA
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Power Dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
(Note 1a)
Parameter
Ratings
鈥?0
鹵
12
鈥?.5
鈥?0
20
2
2.4
1.2
鈥?5 to +150
Units
V
V
A
V
A
W
擄
C
擄
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
60
145
Package Marking and Ordering Information
Device Marking
2P110
Device
FDFM2P110
Reel Size
7"
Tape width
12mm
Quantity
3000 units
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDFM2P110 Rev. C2
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