鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
D
D
G
S
I-PAK
(TO-251AA)
G D S
G
D-PAK
TO-252
(TO-252)
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
鹵20
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
Units
V
A
W
75
100
71
3.8
1.6
鈥?5 to +175
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.1
40
96
擄C/W
Package Marking and Ordering Information
Device Marking
FDD6682
FDU6682
Device
FDD6682
FDU6682
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13鈥欌€?/div>
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
漏2004
Fairchild Semiconductor Corporation
FDD6682/FDU6682 Rev H(W)
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