鈩?/div>
General Description
The FDD6680S is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDD6680S includes
an integrated Schottky diode using Fairchild鈥檚
monolithic SyncFET technology. The performance of
the FDD6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6680A in parallel with a Schottky diode.
Features
鈥?/div>
55 A, 30 V
R
DS(ON)
= 11 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 17 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Includes SyncFET Schottky body diode
鈥?/div>
Low gate charge (17nC typical)
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability
.
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Motor Drives
D
D
G
S
TO-252
S
G
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
鹵20
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
Units
V
V
A
W
55
100
60
3.1
1.3
鈥?5 to +150
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.1
40
96
擄C/W
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDD6680S
Device
FDD6680S
Reel Size
13鈥欌€?/div>
Tape width
16mm
Quantity
2500 units
餂?001
Fairchild Semiconductor Corporation
FDD6680S Rev D(W)
FDD6680S 產品屬性
Fairchild Semiconductor
MOSFET
N-Channel
30 V
+/- 20 V
55 A
0.011 Ohms
Single
+ 150 C
SMD/SMT
TO-252AA
Reel
14 ns
- 55 C
60 W
10 ns
34 ns
FDD6680S相關型號PDF文件下載
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型號
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描述
廠商
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