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FDD6676AS_NL Datasheet

  • FDD6676AS_NL

  • 30V N-Channel PowerTrench SyncFET

  • 120.58KB

  • 8頁

  • FAIRCHILD

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FDD6676AS
April 2005
FDD6676AS
30V N-Channel PowerTrench
廬
SyncFET
鈩?/div>
General Description
The FDD6676AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
and low gate charge.
The FDD6676AS
R
DS(ON)
includes a patented combination of a MOSFET
monolithically integrated with a Schottky diode using
Fairchild鈥檚 monolithic SyncFET technology.
Features
鈥?/div>
90 A, 30 V
R
DS(ON)
= 5.7 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 7.1 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Includes SyncFET schottky body diode
鈥?/div>
Low gate charge (46nC typical)
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Low side notebook
D
D
G
S
G
D-PAK
TO-252
(TO-252)
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
A
=25
o
C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
Ratings
30
鹵20
90
100
70
3.1
1.3
鈥?5 to +150
Units
V
V
A
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
擄C/W
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDD6676AS
FDD6676AS
Device
FDD6676AS
FDD6676AS_NL
(Note 4)
Reel Size
13鈥欌€?/div>
13鈥欌€?/div>
Tape width
12mm
12mm
Quantity
2500 units
2500 units
FDD6676AS Rev A(X)
漏2005
Fairchild Semiconductor Corporation

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