鈩?/div>
General Description
The FDD6670S is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDD6670S includes
an integrated Schottky diode using Fairchild鈥檚
monolithic SyncFET technology. The performance of
the FDD6670S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6670A in parallel with a Schottky diode.
Features
鈥?/div>
64 A, 30 V
R
DS(ON)
= 9 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 12.5 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Includes SyncFET Schottky body diode
鈥?/div>
Low gate charge (17nC typical)
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability
.
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Motor Drives
D
D
G
S
TO-252
S
G
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
鹵20
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
Units
V
V
A
W
64
100
70
3.2
1.3
鈥?5 to +150
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
擄C/W
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDD6670S
漏2001
Fairchild Semiconductor Corporation
Device
FDD6670S
Reel Size
13鈥欌€?/div>
Tape width
16mm
Quantity
2500 units
FDD6670S Rev E(W)
FDD6670S 產(chǎn)品屬性
Fairchild Semiconductor
MOSFET
N-Channel
30 V
+/- 20 V
64 A
0.009 Ohms
Single
+ 150 C
SMD/SMT
TO-252AA
Reel
14 ns
- 55 C
70 W
10 ns
2500
34 ns
FDD6670S相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
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