FDD6670AL Datasheet

IC型號：
FDD6670AL
PDF描述：
30V N-Channel PowerTrench MOSFET
文件大?。?/label>
150.45KB
PDF頁數(shù)：
6頁
芯片廠家：
FAIRCHILD

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FDD6670AL

May 2004

FDD6670AL

30V N-Channel PowerTrench

餂?/div>

MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R

DS( ON)

and fast switching speed.

Features

鈥?/div>

84 A, 30 V.

DS(ON)

= 5 m鈩?@ V

= 10 V

DS(ON)

= 6 m鈩?@ V

= 4.5 V

鈥?/div>

Low gate charge

鈥?/div>

Fast switching

鈥?/div>

High performance trench technology for extremely

low R

DS(ON)

Applications

鈥?/div>

DC/DC converter

鈥?/div>

Motor Drives

I-PAK

(TO-251AA)

G D S

D-PAK

TO-252

(TO-252)

Absolute Maximum Ratings

Symbo

DSS

GSS

=25 C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

鈥?Continuous

鈥?Pulsed

Power Dissipation for Single Operation

(Note 3)

(Note 1a)

(Note 1)

(Note 1a)

(Note 1b)

Ratings

鹵20

100

3.8

1.6

鈥?5 to +175

Units

, T

STG

Operating and Storage Junction Temperature Range

擄C

Thermal Characteristics

胃JC

胃JA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

(Note 1)

(Note 1a)

(Note 1b)

1.8

擄C/W

Package Marking and Ordering Information

Device Marking

FDD6670AL

Device

FDD6670AL

Package

D-PAK (TO-252)

Reel Size

13鈥欌€?/div>

Tape width

12mm

Quantity

2500 units

餂?004

Fairchild Semiconductor Corporation

FDD6670AL Rev C (W)

標準包裝
2,500
類別
分離式半導體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
標準型
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
84A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
5 毫歐 @ 18A，10V
Id 時的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
56nC @ 5V
輸入電容 (Ciss) @ Vds
3845pF @ 15V
功率 - 最大
1.6W
安裝類型
表面貼裝
封裝/外殼
TO-252-3，DPak（2 引線+接片），SC-63
供應商設備封裝
D-Pak
包裝
帶卷 (TR)

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