30V, 9A, 90m鈩?/div>
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Formerly developmental type 83317
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.058鈩?(Typ), V
GS
= 10V, I
D
= 9A
鈥?r
DS(ON)
= 0.090鈩?(Typ), V
GS
= 4.5V, I
D
= 6A
鈥?Q
g(TOT)
(Typ) = 2.6nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 0.8nC
鈥?C
ISS
(Typ) = 255pF
Applications
鈥?DC/DC converters
D
D
G
S
G
D-PAK
TO-252
(TO-252)
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
100
o
C,
o
Parameter
Ratings
30
鹵20
9
6
o
Units
V
V
A
A
A
A
W
W/
o
C
o
V
GS
= 4.5V)
Continuous (T
C
= 25 C, V
GS
= 10V, R
胃JA
= 52 C/W)
4
Figure 4
15
0.1
-55 to 175
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
10
100
52
o
o
C/W
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDD6632
Device
FDD6632
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
漏2002 Fairchild Semiconductor Corporation
FDD6632 Rev. B