FDD6606 Datasheet

IC型號：
FDD6606
PDF描述：
30V N-Channel PowerTrench MOSFET
文件大小：
144.87KB
PDF頁數(shù)：
6頁
芯片廠家：
FAIRCHILD

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FDD6606

February 2004

FDD6606

30V N-Channel PowerTrench

餂?/div>

MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R

DS( ON)

and fast switching speed.

Features

鈥?/div>

75 A, 30 V

DS(ON)

= 6 m鈩?@ V

= 10 V

DS(ON)

= 8 m鈩?@ V

= 4.5 V

鈥?/div>

Low gate charge

鈥?/div>

Fast switching

鈥?/div>

High performance trench technology for extremely

low R

DS(ON)

Applications

鈥?/div>

DC/DC converter

鈥?/div>

Motor Drives

D-PAK

TO-252

(TO-252)

=25 C unless otherwise noted

Absolute Maximum Ratings

Symbol

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

鈥?Continuous

鈥?Pulsed

Parameter

Ratings

鹵

(Note 3)

(Note 1a)

(Note 1)

(Note 1a)

(Note 1b)

Units

100

3.8

1.6

鈥?5 to +175

Power Dissipation for Single Operation

, T

STG

Operating and Storage Junction Temperature Range

擄C

Thermal Characteristics

胃JC

胃JA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

(Note 1)

(Note 1a)

(Note 1b)

2.1

擄C/W

Package Marking and Ordering Information

Device Marking

FDD6606

Device

FDD6606

Package

D-PAK (TO-252)

Reel Size

13鈥欌€?/div>

Tape width

12mm

Quantity

2500 units

餂?004

Fairchild Semiconductor Corporation

FDD6606 Rev B (W)

標準包裝
2,500
類別
分離式半導體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
75A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
6 毫歐 @ 17A，10V
Id 時的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
31nC @ 5V
輸入電容 (Ciss) @ Vds
2400pF @ 15V
功率 - 最大
1.6W
安裝類型
表面貼裝
封裝/外殼
TO-252-3，DPak（2 引線+接片），SC-63
供應商設備封裝
D-Pak
包裝
帶卷 (TR)

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