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FDD6030BL Datasheet

  • FDD6030BL

  • 30V N-Channel PowerTrench MOSFET

  • 6頁(yè)

  • FAIRCHILD

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FDD6030BL/FDU6030BL
July 2001
FDD6030BL/FDU6030BL
30V N-Channel PowerTrench
廬
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
, fast switching speed and
extremely low R
DS(ON)
in a small package.
Features
鈥?/div>
42 A, 30 V
R
DS(ON)
= 16 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 22 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Low gate charge (22 nC typical)
鈥?/div>
Fast switching
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Motor drives
D
G
S
D-PAK
TO-252
(TO-252)
D
I-PAK
(TO-251AA)
G D S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
鹵20
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Units
V
V
A
Continuous Drain Current @T
C
=25擄C
@T
A
=25擄C
Pulsed
42
10
100
50
3.8
1.6
鈥?5 to +175
P
D
Power Dissipation
@T
C
=25擄C
@T
A
=25擄C
@T
A
=25擄C
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃J
C
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
3.0
45
96
擄C/W
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDD6030BL
FDU6030BL
Device
FDD6030BL
FDU6030BL
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13鈥欌€?/div>
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
漏2001
Fairchild Semiconductor Corporation
FDD6030BL/FDU6030BL Rev C(W)

FDD6030BL 產(chǎn)品屬性

  • Fairchild Semiconductor

  • MOSFET

  • N-Channel

  • 30 V

  • +/- 20 V

  • 42 A

  • 0.0077 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • TO-252AA

  • Reel

  • 5 ns

  • - 55 C

  • 3.8 W

  • 10 ns

  • 2500

  • 18 ns

  • FDD6030BL_NL

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