FDD5612
July 1999
ADVANCE INFORMATION
FDD5612
60V N-Channel PowerTrench
TM
MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
This MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications. The result is a MOSFET that is easier to
drive, even at very high frequencies, and DC/DC power
supply designs with higher overall efficiency.
Features
聲
19 A, 60 V. R
DS(ON)
= 0.055
鈩?/div>
@ V
GS
= 10 V
R
DS(ON)
= 0.064
鈩?/div>
@ V
GS
= 6 V.
聲
Optimized for use in
聲
聲
Low gate charge.
Very fast switching.
high frequency DC/DC converters.
Applications
聲
聲
DC/DC converter
Motor drives
D
D
G
S
TO-252
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Maximum Drain Current
P
D
-Continuous
-Pulsed
o
G
S
T
C
=25 C unless otherwise noted
o
Parameter
Ratings
60
鹵20
(Note 1)
(Note 1a)
Units
V
V
A
19
6
100
36
3.2
1.3
-55 to +150
Maximum Power Dissipation @ T
C
= 25 C
T
A
= 25 C
T
A
= 25 C
o
o
(Note 1)
(Note 1a)
(Note 1b)
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
3.5
40
96
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDD5612
錚?999
Fairchild Semiconductor Corporation
Device
FDD5612
Reel Size
13鈥?/div>
Tape Width
16mm
Quantity
2500
FDD5612 Rev. A
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