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FDD5202P Datasheet

  • FDD5202P

  • P-Channel, Logic Level, MOSFET

  • 62.63KB

  • 5頁

  • FAIRCHILD

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FDD5202P
February 1999
PRELIMINARY
FDD5202P
P-Channel, Logic Level, MOSFET
General Description
This P-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced process that has
been especially tailored to minimize the on state
resistance and yet maintain low gate charge for superior
switching performance.
Features
鈥?/div>
鈥?/div>
鈥?/div>
-8 A, -60 V. R
DS(on)
= 0.3
鈩?/div>
@ V
GS
= -10 V
R
DS(on)
= 0.5
鈩?/div>
@ V
GS
= -4.5 V.
Low gate charge (15.5nC typical).
Fast switching speed.
Applications
鈥?/div>
鈥?/div>
鈥?/div>
DC/DC converter
Motor drives
L.D.O.
S
D
G
S
TO-252
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
P
D
Maximum Power Dissipation @ T
C
= 25 C
T
A
= 25 C
T
A
= 25 C
T
J
, T
stg
o
o
o
G
D
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
-60
(Note 1)
(Note 1a)
Units
V
V
A
20
-8
-2.3
-15
39
2.8
1.3
-55 to +150
(Note 1)
(Note 1a)
(Note 1b)
W
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
R
JC
R
JA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
3.2
96
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDD5202P
漏1999
Fairchild Semiconductor Corporation
Device
FDD5202P
Reel Size
13鈥欌€?/div>
Tape width
16mm
Quantity
2500
FDD5202P, Rev. A

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