FDD3680
February 2001
FDD3680
100V N-Channel PowerTrench
廬
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
鈥?/div>
25 A, 100 V.
R
DS(ON)
= 46 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 51 m鈩?@ V
GS
= 6 V
鈥?/div>
Low gate charge (38 nC typical)
鈥?/div>
Fast switching speed
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability.
D
D
G
S
TO-252
S
G
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
100
(Note 1)
Units
V
V
A
W
鹵20
25
100
68
3.8
1.6
鈥?5 to +175
Maximum Power Dissipation
(Note 1)
(Note 1a)
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃J
C
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1b)
2.2
96
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDD3680
Device
FDD3680
Reel Size
13鈥欌€?/div>
Tape width
16mm
Quantity
2500 units
漏2001
Fairchild Semiconductor Corporation
FDD3680 Rev B1(W)
FDD3680相關(guān)型號(hào)PDF文件下載
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