鈻?/div>
DC/DC converter
General Description
This P-Channel 1.8V Speci鏗乪d MOSFET uses Fairchild鈥檚
advanced low voltage PowerTrench process. It has been opti-
mized for battery power management.
S
G
S
TO-252
D
G
D
Absolute Maximum Ratings
T
A
=25擄C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
T
J
, T
STG
R
胃
JC
R
胃
JA
R
胃
JA
Operating and Storage Junction Temperature Range
Parameter
Ratings
鈥?2
鹵
8
鈥?.7
鈥?4
52
3.8
1.6
鈥?5 to +175
Units
V
V
A
W
擄
C
擄
C/W
擄
C/W
擄
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.9
40
96
Package Marking and Ordering Information
Device Marking
FDD306P
Device
FDD306P
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDD306P Rev. C
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