60V, 36A, 26m鈩?/div>
Features
鈥?r
DS(ON)
= 20m鈩?(Typ.), V
GS
= 10V, I
D
= 36A
鈥?Q
g
(tot) = 13nC (Typ.), V
GS
= 10V
鈥?Low Miller Charge
鈥?Low Q
RR
Body Diode
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
鈥?Qualified to AEC Q101
Formerly developmental type 82544
Applications
鈥?Motor / Body Load Control
鈥?ABS Systems
鈥?Powertrain Management
鈥?Injection Systems
鈥?DC-DC converters and Off-line UPS
鈥?Distributed Power Architectures and VRMs
鈥?Primary Switch for 12V and 24V systems
DRAIN
(FLANGE)
GATE
D
G
SOURCE
TO-252AA
FDD SERIES
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy ( Note 1)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
100
o
C,
V
GS
= 10V)
V
GS
= 10V, R
胃JA
=
52
o
C/W)
Continuous (T
amb
=
25
o
C,
36
25
7
Figure 4
35
75
0.5
-55 to 175
A
A
A
A
mJ
W
W/
o
C
o
C
Parameter
Ratings
60
鹵20
Units
V
V
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252,
1in
2
copper pad area
2.0
100
52
o
o
C/W
C/W
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
漏2004 Fairchild Semiconductor Corporation
FDD26AN06A0 Rev. A