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FDD16AN08A0 Datasheet

  • FDD16AN08A0

  • N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз

  • 11頁

  • FAIRCHILD

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上傳產(chǎn)品規(guī)格書

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FDD16AN08A0
May 2002
FDD16AN08A0
N-Channel UltraFET
廬
Trench MOSFET
75V, 50A, 16m鈩?/div>
Features
鈥?r
DS(ON)
= 13m鈩?(Typ.), V
GS
= 10V, I
D
= 50A
鈥?Q
g
(tot) = 31nC (Typ.), V
GS
= 10V
鈥?Low Miller Charge
鈥?Low Qrr Body Diode
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
鈥?Qualified to AEC Q101
Formerly developmental type 82660
Applications
鈥?42V Automotive Load Control
鈥?Starter / Alternator Systems
鈥?Electronic Power Steering Systems
鈥?Electronic Valve Train Systems
鈥?DC-DC converters and Off-line UPS
鈥?Distributed Power Architectures and VRMs
鈥?Primary Switch for 24V and 48V systems
DRAIN (FLANGE)
D
GATE
SOURCE
G
TO-252AA
FDD SERIES
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
C
< 79
o
C, V
GS
= 10V)
Continuous (T
amb
= 25 C, V
GS
= 10V, with R
胃JA
= 52 C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
Parameter
Ratings
75
鹵20
50
9
Figure 4
95
135
0.9
-55 to 175
Units
V
V
A
A
A
mJ
W
W/
o
C
o
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
1.11
100
52
o
o
o
C/W
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive
industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality
systems certification.
漏2002 Fairchild Semiconductor Corporation
FDD16AN08A0 Rev. A1

FDD16AN08A0 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 2,500

  • 分離式半導體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 75V

  • 50A

  • 16 毫歐 @ 50A，10V

  • 4V @ 250µA

  • 47nC @ 10V

  • 1874pF @ 25V

  • 135W

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • TO-252AA

  • 帶卷 (TR)

  • FDD16AN08A0-NDFDD16AN08A0TR

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