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FDD14AN06LA0 Datasheet

  • FDD14AN06LA0

  • N-Channel PowerTrench MOSFET 60V, 50A, 14.6m???

  • 11頁

  • FAIRCHILD

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FDD14AN06LA0
January 2004
FDD14AN06LA0
N-Channel PowerTrench
廬
MOSFET
60V, 50A, 14.6m鈩?/div>
Features
鈥?r
DS(ON)
= 12.8m鈩?(Typ.), V
GS
= 5V, I
D
= 50A
鈥?Q
g
(tot) = 25nC (Typ.), V
GS
= 5V
鈥?Low Miller Charge
鈥?Low Q
RR
Body Diode
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
鈥?Qualified to AEC Q101
Formerly developmental type 83557
Applications
鈥?Motor / Body Load Control
鈥?ABS Systems
鈥?Powertrain Management
鈥?Injection Systems
鈥?DC-DC converters and Off-line UPS
鈥?Distributed Power Architectures and VRMs
鈥?Primary Switch for 12V and 24V systems
DRAIN
(FLANGE)
GATE
SOURCE
D
G
S
TO-252AA
FDD SERIES
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
< 100
o
C, V
GS
= 10V)
I
D
Continuous (T
C
< 80 C, V
GS
= 5V)
Continuous (T
amb
= 25 C, V
GS
= 5V, with R
胃JA
= 52 C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
o
Parameter
Ratings
60
鹵20
50
50
9.5
Figure 4
55
125
0.83
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/
o
C
o
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2
1.2
100
52
o
C/W
o
o
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
漏2004 Fairchild Semiconductor Corporation
FDD14AN06LA0 Rev. C

FDD14AN06LA0 產(chǎn)品屬性

  • 2,500

  • 分離式半導體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 50A

  • 11.6 毫歐 @ 50A，10V

  • 3V @ 250µA

  • 32nC @ 5V

  • 2810pF @ 25V

  • 125W

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • D-Pak

  • 帶卷 (TR)

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