鈩?/div>
@ V
GS
= -4.5 V.
Low gate charge (8nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
S
D
D
1
6
8
.65
G
D
2
5
SuperSOT
TM
-6
pin
1
D
3
4
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25擄C unless otherwise note
Ratings
Units
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1a)
-30
鹵20
-4
-20
1.6
0.8
-55 to 150
V
V
A
W
T
J
,T
STG
R
胃JA
R
胃JC
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
擄C/W
擄C/W
漏 1999 Fairchild Semiconductor Corporation
FDC658P Rev.C