鈩?/div>
@ V
GS
= 4.5 V
Very fast switching.
Low gate charge (2.1nC typical).
SuperSOT
TM
-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
These N-Channel
Logic
Level MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for all applications where
small size is desireable but especially low cost DC/DC
conversion in battery powered systems.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D2
S1
D1
1
.56
G2
S2
4
3
5
2
SuperSOT
TM
-6
pin
1
G1
6
1
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25擄C unless otherwise note
Ratings
Units
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
30
鹵20
2.5
10
0.96
0.9
0.7
-55 to 150
V
V
A
W
T
J
,T
STG
R
胃JA
R
胃JC
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
擄C/W
擄C/W
FDC6561AN Rev.C
漏 1999 Fairchild Semiconductor Corporation