鈩?/div>
@ V
GS
= -2.5 V
Fast switching speed.
Low gate charge (7.2nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
Applications
聲
Load switch
聲
Battery protection
聲
Power management
D
D
S
1
6
2
5
SuperSOT
TM
-6
D
D
G
3
4
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
- Continuous
- Pulsed
T
A
= 25擄C unless otherwise noted
Parameter
Ratings
-20
(Note 1)
(Note 1a)
(Note 1a)
(Note 1b)
Units
V
V
A
W
擄C
鹵8
-4
-20
1.6
0.8
-55 to +150
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
擄C/W
擄C/W
Package Outlines and Ordering Information
Device Marking
.642
Device
FDC642P
Reel Size
7鈥欌€?/div>
Tape Width
8mm
Quantity
3000 units
錚?999
Fairchild Semiconductor Corporation
FDC642P, Rev. B
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