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FDC6327C

July 2000

FDC6327C

Dual N & P-Channel 2.5V Specified PowerTrench

TM

MOSFET

General Description

These N & P-Channel 2.5V specified MOSFETs are

produced using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain low gate

charge for superior switching performance.

These devices have been designed to offer exceptional power

dissipation in a very small footprint for applications where

the bigger more expensive SO-8 and TSSOP-8 packages

are impractical.

Features

鈥?/div>

N-Channel 2.7A, 20V. R

DS(on)

= 0.08鈩?@ V

GS

= 4.5V

R

DS(on)

= 0.12鈩?@ V

GS

= 2.5V

P-Channel -1.6A, -20V.R

DS(on)

= 0.17鈩?@ V

GS

= -4.5V

R

DS(on)

= 0.25鈩?@ V

GS

= -2.5V

Fast switching speed.

Low gate charge.

High performance trench technology for extremely

low R

DS(ON)

.

SuperSOT

TM

-6 package: small footprint (72% smaller

than SO-8); low profile (1mm thick).

Applications

鈥?/div>

DC/DC converter

鈥?/div>

Load switch

鈥?/div>

Motor driving

D2

S1

D1

4

3

5

2

G2

SuperSOT

TM

-6

S2

G1

T

A

= 25擄C unless otherwise noted

6

1

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

I

D

P

D

Drain-Source Voltage

Gate-Source Voltage

Drain Current

- Continuous

- Pulsed

Power Dissipation

Parameter

N-Channel

20

(Note 1a)

P-Channel

-20

鹵

8

-1.9

-8

0.96

0.9

0.7

Units

V

A

W

鹵

8

2.7

8

(Note 1a)

(Note 1b)

(Note 1c)

T

J

, T

stg

R

胃

JA

R

胃

JC

Operating and Storage Junction Temperature Range

-55 to +150

擄

C

擄

C/W

擄

C/W

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

130

60

Package Marking and Ordering Information

Device Marking

.327

錚?999

Fairchild Semiconductor Corporation

Device

FDC6327C

Reel Size

7鈥?/div>

Tape Width

8mm

Quantity

3000

FDC6327C, Rev. E

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標準包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
PowerTrench®
FET 型
N 和 P 溝道
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
20V
電流 - 連續(xù)漏極(Id) @ 25° C
2.7A，1.9A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
80 毫歐 @ 2.7A，4.5V
Id 時的 Vgs(th)（最大）
1.5V @ 250µA
閘電荷(Qg) @ Vgs
4.5nC @ 4.5V
輸入電容 (Ciss) @ Vds
325pF @ 10V
功率 - 最大
700mW
安裝類型
表面貼裝
封裝/外殼
SOT-23-6 細型，TSOT-23-6
供應(yīng)商設(shè)備封裝
6-SSOT
包裝
帶卷 (TR)
其它名稱
FDC6327C-NDFDC6327CTR

FDC6327C相關(guān)型號PDF文件下載

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FDC6327C Datasheet

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