FDC6310P
April 2001
FDC6310P
Dual P-Channel 2.5V Specified PowerTrench
廬
MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Features
鈥?/div>
鈥?.2 A, 鈥?0 V. R
DS(ON)
= 125 m鈩?@ V
GS
= 鈥?.5 V
R
DS(ON)
= 190 m鈩?@ V
GS
= 鈥?.5 V
鈥?/div>
Low gate charge
鈥?/div>
Fast switching speed
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
SuperSOT TM -6 package: small footprint 72%
smaller than standard SO-8); low profile (1mm thick)
Applications
鈥?/div>
Load switch
鈥?/div>
Battery protection
鈥?/div>
Power management
D2
S1
D1
4
5
G2
S2
G1
T
A
=25
o
C unless otherwise noted
3
2
1
SuperSOT
TM
-6
6
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Parameter
Ratings
鈥?0
鹵12
(Note 1a)
Units
V
V
A
W
鈥?.2
鈥?
0.96
0.9
0.7
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃J
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
.310
漏2001
Fairchild Semiconductor Corporation
Device
FDC6310P
Reel Size
7鈥欌€?/div>
Tape width
8mm
Quantity
3000 units
FDC6310P Rev C(W)
FDC6310P相關(guān)型號(hào)PDF文件下載
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