FDC6308P Datasheet

IC型號：
FDC6308P
PDF描述：
Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET
文件大小：
325.45KB
PDF頁數(shù)：
8頁
芯片廠家：
FAIRCHILD

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FDC6308P

July 1999

FDC6308P

Dual P-Channel 2.5V Specified PowerTrench

MOSFET

General Description

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild Semiconductor's advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V - 12V).

These devices have been designed to offer exceptional

power dissipation in a very small footprint for applications

where the bigger more expensive SO-8 and TSSOP-8

packages are impractical.

Features

聲

-1.7 A, -18 V. R

DS(ON)

= 0.18

鈩?/div>

@ V

= -4.5 V

DS(ON)

= 0.30

鈩?/div>

@ V

= -2.5 V

聲

Extended V

GSS

range (

鹵

12V) for battery applications.

Low gate charge (3nC typical).

Fast switching speed.

High performance trench technology for extremely

low R

DS(ON)

Applications

聲

Load switch

聲

Battery protection

聲

Power management

SuperSOT

-6 package: small footprint (72% smaller

聽聽聽聽than standard SO-8); low profile (1mm thick).

SuperSOT

-6

= 25擄C unless otherwise noted

Absolute Maximum Ratings

Symbol

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

- Continuous

- Pulsed

Parameter

Ratings

-20

(Note 1a)

Units

鹵12

-1.7

-5

0.96

0.9

0.7

-55 to +150

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

, T

stg

Operating and Storage Junction Temperature Range

擄C

Thermal Characteristics

胃JA

胃JC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

130

擄C/W

Package Marking and Ordering Information

Device Marking

308

Device

FDC6308P

Reel Size

7鈥欌€?/div>

Tape Width

8mm

Quantity

3000 units

錚?999

Fairchild Semiconductor Corporation

FDC6308P Rev. C

制造商
Fairchild Semiconductor
晶體管極性
P-Channel
汲極/源極擊穿電壓
20 V
閘/源擊穿電壓
+/- 12 V
漏極連續(xù)電流
1.7 A
電阻汲極/源極 RDS（導(dǎo)通）
180 mOhms at 4.5 V
配置
Dual
最大工作溫度
+ 150 C
安裝風(fēng)格
SMD/SMT
封裝 / 箱體
SuperSOT-6
封裝
Reel
下降時間
9 ns
最小工作溫度
- 55 C
功率耗散
960 mW
上升時間
9 ns
工廠包裝數(shù)量
3000
典型關(guān)閉延遲時間
14 ns

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