FDC6304P Datasheet

IC型號(hào)：
FDC6304P
PDF描述：
Digital FET, Dual P-Channel
文件大小：
77.37KB
PDF頁(yè)數(shù)：
4頁(yè)
芯片廠家：
FAIRCHILD

閱覽下載糾錯(cuò) 0

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書(shū)

PDF預(yù)覽

July 1997

FDC6304P

Digital FET, Dual P-Channel

General Description

These P-Channel enhancement mode field effect transistor are

produced using Fairchild's proprietary, high cell density, DMOS

technology. This very high density process is tailored to minimize

on-state resistance at low gate drive conditions. This device is

designed especially for application in battery power applications

such as notebook computers and cellular phones. This device

has excellent on-state resistance even at gate drive voltages as

low as 2.5 volts.

Features

-25 V, -0.46 A continuous, -1.0 A Peak.

DS(ON)

= 1.5

鈩?/div>

@ V

= -2.7 V

DS(ON)

= 1.1

鈩?/div>

@ V

= -4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

GS(th)

< 1.5 V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model.

SOT-23

SuperSOT -6

Mark: .304

SuperSOT

-8

SO-8

SOT-223

SOIC-16

Absolute Maximum Ratings

Symbol

DSS

GSS

STG

ESD

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

= 25

C unless other wise noted

FDC6304P

-25

-8

Units

- Continuous

- Pulsed

-0.46

-1

(Note 1a)

(Note 1b)

Maximum Power Dissipation

0.9

0.7

-55 to 150

6.0

Operating and Storage Temperature Range

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

擄C

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

140

擄C/W

FDC6304P Rev.D

漏 1997 Fairchild Semiconductor Corporation

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
-
FET 型
2 個(gè) P 溝道（雙）
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
25V
電流 - 連續(xù)漏極(Id) @ 25° C
460mA
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
1.1 歐姆 @ 500mA，4.5V
Id 時(shí)的 Vgs(th)（最大）
1.5V @ 250µA
閘電荷(Qg) @ Vgs
1.5nC @ 4.5V
輸入電容 (Ciss) @ Vds
62pF @ 10V
功率 - 最大
700mW
安裝類型
表面貼裝
封裝/外殼
SOT-23-6 細(xì)型，TSOT-23-6
供應(yīng)商設(shè)備封裝
6-SSOT
包裝
帶卷 (TR)
其它名稱
FDC6304P-NDFDC6304PTR

FDC6304P相關(guān)型號(hào)PDF文件下載

型號(hào)

版本

描述

廠商

下載
FDC60

英文版

60 WATTS OUTPUT POWER

ETC

FDC60
FDC60

英文版

60 WATTS OUTPUT POWER

ETC [ETC]

FDC60
FDC602

英文版

P-Channel 2.5V Specified PowerTrench MOSFET

FAIRCHILD

FDC602
FDC602

英文版

P-Channel 2.5V Specified PowerTrench MOSFET

FAIRCHILD ...

FDC602
FDC604

英文版

P-Channel 1.8V Specified PowerTrench MOSFET

FAIRCHILD

FDC604
FDC604

英文版

P-Channel 1.8V Specified PowerTrench MOSFET

FAIRCHILD ...

FDC604
FDC634

英文版

P-Channel Enhancement Mode Field Effect Transistor

FAIRCHILD

FDC634
FDC634

英文版

P-Channel Enhancement Mode Field Effect Transistor

FAIRCHILD ...

FDC634
FDC638

英文版

P-Channel 2.5V Specified PowerTrenchTM MOSFET

FAIRCHILD

FDC638
FDC638

英文版

P-Channel 2.5V Specified PowerTrenchTM MOSFET

FAIRCHILD ...

FDC638
FDC642

英文版

P-Channel 2.5V Specified PowerTrench⑩MOSFET

FAIRCHILD

FDC642
FDC642

英文版

P-Channel 2.5V Specified PowerTrench⑩MOSFET

FAIRCHILD ...

FDC642
FDC645

英文版

N-Channel PowerTrench MOSFET

FAIRCHILD

FDC645
FDC645

英文版

N-Channel PowerTrench MOSFET

FAIRCHILD ...

FDC645
FDC653

英文版

N-Channel Enhancement Mode Field Effect Transistor

FAIRCHILD

FDC653
FDC653

英文版

N-Channel Enhancement Mode Field Effect Transistor

FAIRCHILD ...

FDC653
FDC602P

英文版

P-Channel 2.5V Specified PowerTrench MOSFET

FAIRCHILD

FDC602P
FDC602P

英文版

P-Channel 2.5V Specified PowerTrench MOSFET

FAIRCHILD ...

FDC602P
FDC604P

英文版

P-Channel 1.8V Specified PowerTrench MOSFET

FAIRCHILD

FDC604P
FDC604P

英文版

P-Channel 1.8V Specified PowerTrench MOSFET

FAIRCHILD ...

FDC604P

FDC6304P Datasheet

PDF預(yù)覽

FDC6304P 產(chǎn)品屬性

FDC6304P相關(guān)型號(hào)PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號(hào)推薦

FDC6304P Datasheet

PDF預(yù)覽

FDC6304P 產(chǎn)品屬性

FDC6304P相關(guān)型號(hào)PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號(hào)推薦

建議反饋

PDF糾錯(cuò)X