FDC6303N Datasheet

IC型號：
FDC6303N
PDF描述：
Digital FET, Dual N-Channel
文件大?。?/label>
75.36KB
PDF頁數(shù)：
4頁
芯片廠家：
FAIRCHILD

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August 1997

FDC6303N

Digital FET, Dual N-Channel

General Description

These dual N-Channel logic level enhancement mode field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state

resistance. This device has been designed especially for

low voltage applications as a replacement for digital

transistors in load switching applications. Since bias

resistors are not required this one N-Channel FET can

replace several digital transistors with different bias

resistors like the IMHxA series.

Features

25 V, 0.68 A continuous, 2 A Peak.

DS(ON)

= 0.6

鈩?/div>

@ V

= 2.7 V

DS(ON)

= 0.45

鈩?/div>

@ V

= 4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

GS(th)

< 1.5 V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Replace multiple NPN digital transistors (IMHxA series)

with one DMOS FET.

SOT-23

SuperSOT

-6

SuperSOT -8

SO-8

SOT-223

SOIC-16

Mark: .303

Absolute Maximum Ratings

Symbol

DSS

GSS

STG

ESD

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

= 25擄C unless otherwise noted

FDC6303N

- Continuous

- Pulsed

0.68

(Note 1a)

(Note 1b)

Units

Maximum Power Dissipation

0.9

0.7

-55 to 150

6.0

Operating and Storage Temperature Range

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

擄C

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

140

擄C/W

漏 1997 Fairchild Semiconductor Corporation

FDC6303N Rev.C

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
-
FET 型
2 個 N 溝道（雙）
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
25V
電流 - 連續(xù)漏極(Id) @ 25° C
680mA
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
450 毫歐 @ 500mA，4.5V
Id 時的 Vgs(th)（最大）
1.5V @ 250µA
閘電荷(Qg) @ Vgs
2.3nC @ 4.5V
輸入電容 (Ciss) @ Vds
50pF @ 10V
功率 - 最大
700mW
安裝類型
表面貼裝
封裝/外殼
SOT-23-6 細型，TSOT-23-6
供應(yīng)商設(shè)備封裝
6-SSOT
包裝
帶卷 (TR)
其它名稱
FDC6303NTR

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