FDB66N15 150V N-Channel MOSFET
September 2005
UniFET
FDB66N15
150V N-Channel MOSFET
Features
鈥?66A, 150V, R
DS(on)
= 0.036鈩?@V
GS
= 10 V
鈥?Low gate charge ( typical 49 nC)
鈥?Low C
rss
( typical 78.5 pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild鈥檚 proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
D
G
G
S
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FDB66N15
150
66
41.8
264
鹵30
1240
66
35.7
4.5
357
2.86
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
*
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Min.
--
--
--
Max.
0.35
40
62.5
Unit
擄C/W
擄C/W
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDB66N15 Rev A