一级床上爽人人看九一自拍,国产二级黄色亚洲97

General Description

This MOSFET is designed to replace a single MOSFET

and parallel Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

and low gate charge.

The FDP6670AS

R

DS(ON)

includes an integrated Schottky diode using Fairchild鈥檚

monolithic SyncFET technology. The performance of

the FDP6670AS/FDB6670AS as the low-side switch in

a synchronous rectifier is indistinguishable from the

performance of the FDP6670A/FDB6670A in parallel

with a Schottky diode.

Features

鈥?/div>

31 A, 30 V.

R

DS(ON)

= 8.5 m鈩?@ V

GS

= 10 V

R

DS(ON)

= 10.5 m鈩?@ V

GS

= 4.5 V

鈥?/div>

Includes SyncFET Schottky body diode

鈥?/div>

Low gate charge (28nC typical)

鈥?/div>

High performance trench technology for extremely

low R

DS(ON)

and fast switching

鈥?/div>

High power and current handling capability

D

G

D

TO-220

S

FDP Series

G

S

TO-263AB

FDB Series

S

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

I

D

P

D

T

J

, T

STG

T

L

Drain-Source Voltage

Gate-Source Voltage

Drain Current 鈥?Continuous

鈥?Pulsed

T

A

=25

o

C unless otherwise noted

Parameter

Ratings

30

鹵20

62

(Note 1)

Units

V

A

W

W/擄C

擄C

150

62.5

0.5

鈥?5 to +150

275

Total Power Dissipation @ T

C

= 25擄C

Derate above 25擄C

Operating and Storage Junction Temperature Range

Maximum lead temperature for soldering purposes,

1/8鈥?from case for 5 seconds

Thermal Characteristics

R

胃JC

R

胃JA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

2.1

62.5

擄C/W

Package Marking and Ordering Information

Device Marking

FDB6670AS

FDP6670AS

Device

FDB6670AS

FDB6670AS_NL

(Note 3)

FDP6670AS

FDP6670AS_NL

(Note 4)

Reel Size

13鈥欌€?/div>

Tube

Tape width

24mm

n/a

Quantity

800 units

45

FDP6670AS/FDB6670AS Rev A(X)

漏2005

Fairchild Semiconductor Corporation

標(biāo)準(zhǔn)包裝
800
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
62A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
8.5 毫歐 @ 31A，10V
Id 時的 Vgs(th)（最大）
3V @ 1mA
閘電荷(Qg) @ Vgs
39nC @ 15V
輸入電容 (Ciss) @ Vds
1570pF @ 15V
功率 - 最大
62.5W
安裝類型
表面貼裝
封裝/外殼
TO-263-3，D²Pak（2 引線+接片），TO-263AB
供應(yīng)商設(shè)備封裝
TO-263AB
包裝
帶卷 (TR)

FDB6670AS相關(guān)型號PDF文件下載

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FDB6670AS Datasheet

PDF預(yù)覽

FDB6670AS 產(chǎn)品屬性

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