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FDB5680 Datasheet

  • FDB5680

  • 60V N-Channel PowerTrench⑩ MOSFET

  • 16頁(yè)

  • FAIRCHILD

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FDP5680/FDB5680
July 2000
FDP5680/FDB5680
General Description
60V N-Channel PowerTrench
TM
MOSFET
Features
聲 40 A, 60 V. R
DS(ON)
= 0.020
鈩?/div>
@ V
GS
= 10 V
R
DS(ON)
= 0.023
鈩?/div>
@ V
GS
= 6 V.
聲 Critical DC electrical parameters specified at evevated
temperature.
聲 Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
聲 High performance trend technology for
extremely low R
DS(ON)
.
聲 175擄C maximum junction temperature rating.
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
D
D
G
G
D
TO-220
S
FDP Series
G
S
T
C
= 25擄C unless otherwise noted
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Parameter
FDP5680
60
鹵20
40
120
65
0.43
FDB5680
Units
V
V
A
W
W/擄C
擄C
- Continuous
- Pulsed
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction Temperature Range
-65 to +175
Thermal Characteristics
R
胃
JC
R
胃
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.3
62.5
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDB5680
FDP5680
Device
FDB5680
FDP5680
Reel Size
13鈥欌€?/div>
Tube
Tape Width
24mm
N/A
Quantity
800
45
錚?000
Fairchild Semiconductor International
FDP5680/FDB5680 Rev. C

FDB5680 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 60 V

  • +/- 20 V

  • 40 A

  • 0.02 Ohms at 10 V

  • Single

  • + 175 C

  • SMD/SMT

  • TO-263AB

  • Reel

  • 16 ns

  • 43 S

  • - 65 C

  • 65 W

  • 9 ns

  • 800

  • 35 ns

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