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FDB5645 Datasheet

  • FDB5645

  • 60V N-Channel PowerTrench MOSFET

  • 10頁

  • FAIRCHILD

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FDP5645/FDB5645
March 2000
FDP5645/FDB5645
60V N-Channel PowerTrench
廬
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
鈥?/div>
80 A, 60 V.
R
DS(ON)
= 0.0095
鈩?/div>
@ V
GS
= 10 V
R
DS(ON)
= 0.011
鈩?/div>
@ V
GS
= 6 V.
鈥?/div>
Critical DC electrical parameters specified at
elevated temperature.
鈥?/div>
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor.
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
.
鈥?/div>
175擄C maximum junction temperature rating.
D
D
G
G
D
TO-220
S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
T
A
=25
o
C unless otherwise noted
Parameter
鈥?Continuous (note 3)
鈥?Pulsed
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction Temperature Range
Maximum lead termperature for soldering purposes,
1/8鈥?from case for 5 seconds
FDP5645
FDB5645
Units
V
V
A
W
W/擄C
擄C
擄C
60
鹵20
80
300
125
0.83
-65 to +175
+275
Thermal Characteristics
R
胃J
C
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.2
62.5
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDB5645
FDP5645
Device
FDB5645
FDP5645
Reel Size
13鈥?/div>
note 2
Tape width
24mm
Quantity
800 units
漏
2000 Fairchild Semiconductor Corporation
FDP5645/FDB5645 Rev B (W)

FDB5645 產(chǎn)品屬性

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 80A

  • 9.5 毫歐 @ 40A，10V

  • 4V @ 250µA

  • 107nC @ 10V

  • 4468pF @ 30V

  • 125W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • TO-263AB

  • 帶卷 (TR)

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