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FDB3672 Datasheet

  • FDB3672

  • N-Channel PowerTrench MOSFET

  • 11頁(yè)

  • FAIRCHILD

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FDB3672
July 2004
FDB3672
N-Channel PowerTrench
廬
MOSFET
100V, 44A, 28m鈩?/div>
Features
鈥?r
DS(ON)
= 24m鈩?(Typ.), V
GS
= 10V, I
D
= 44A
鈥?Q
g
(tot) = 24nC (Typ.), V
GS
= 10V
鈥?Low Miller Charge
鈥?Low Q
RR
Body Diode
鈥?Optimized efficiency at high frequencies
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
鈥?Qualified to AEC Q101
Applications
鈥?DC/DC converters and Off-Line UPS
鈥?Distributed Power Architectures and VRMs
鈥?Primary Switch for 24V and 48V Systems
鈥?High Voltage Synchronous Rectifier
鈥?Direct Injection / Diesel Injection Systems
鈥?42V Automotive Load Control
鈥?/div>
Electronic Valve Train Systems
Formerly developmental type 82760
DRAIN
(FLANGE)
GATE
D
SOURCE
G
TO-263AB
FDB SERIES
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Continuous (T
amb
= 25 C, V
GS
= 10V, R
胃JA
= 43 C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
Parameter
Ratings
100
鹵20
44
31
7.2
Figure 4
120
120
0.8
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/
o
C
o
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
2
1.25
62
43
o
C/W
C/W
o
C/W
o
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
漏2004 Fairchild Semiconductor Corporation
FDB3672 Rev. A

FDB3672 產(chǎn)品屬性

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 100V

  • 44A

  • 28 毫歐 @ 44A，10V

  • 4V @ 250µA

  • 31nC @ 10V

  • 1710pF @ 25V

  • 120W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D²PAK

  • 帶卷 (TR)

FDB3672相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC
  • 英文版
    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC [DIOTE...
  • 英文版
    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC
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    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC [DIOTE...
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    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
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    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC [DIOTE...
  • 英文版
    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC
  • 英文版
    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC [DIOTE...
  • 英文版
    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC
  • 英文版
    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC [DIOTE...
  • 英文版
    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC
  • 英文版
    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC [DIOTE...
  • 英文版
    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC
  • 英文版
    3 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC [DIOTE...
  • 英文版
    35 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC
  • 英文版
    35 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC [DIOTE...
  • 英文版
    35 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC
  • 英文版
    35 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC [DIOTE...
  • 英文版
    N-Channel Power Trench㈢ MOSFET 75V, 14A, 47mヘ
    FAIRCHILD
  • 英文版
    35 AMP FAST RECOVERY BRIDGE RECTIFIERS
    DEC

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