FDB3652 Datasheet

IC型號(hào)：
FDB3652
PDF描述：
N-Channel PowerTrench MOSFET 100V, 61A, 16mз
文件大小：
266.14KB
PDF頁數(shù)：
11頁
芯片廠家：
FAIRCHILD

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FDB3652 / FDP3652 / FDI3652

October 2002

FDB3652 / FDP3652 / FDI3652

N-Channel PowerTrench

廬

MOSFET

100V, 61A, 16m鈩?/div>

Features

鈥?r

DS(ON)

= 14m鈩?(Typ.), V

= 10V, I

= 61A

鈥?Q

(tot) = 41nC (Typ.), V

= 10V

鈥?Low Miller Charge

鈥?Low Q

Body Diode

鈥?UIS Capability (Single Pulse and Repetitive Pulse)

鈥?Qualified to AEC Q101

Formerly developmental type 82769

Applications

鈥?DC/DC Converters and Off-line UPS

鈥?Distributed Power Architectures and VRMs

鈥?Primary Switch for 24V and 48V Systems

鈥?High Voltage Synchronous Rectifier

鈥?Direct Injection / Diesel Injection Systems

鈥?42V Automotive Load Control

鈥?Electronic Valve Train Systems

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

SOURCE

TO-263AB

FDB SERIES

TO-220AB

FDP SERIES

DRAIN

(FLANGE)

TO-262AA

FDI SERIES

MOSFET Maximum Ratings

= 25擄C unless otherwise noted

Symbol

DSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Continuous (T

= 25

C, V

= 10V)

Continuous (T

= 100 C, V

= 10V)

Continuous (T

amb

= 25 C, V

= 10V) with R

胃JA

= 43 C/W)

Pulsed

, T

STG

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25 C

Operating and Storage Temperature

Parameter

Ratings

100

鹵20

Figure 4

182

150

1.0

-55 to 175

Units

Thermal Characteristics

胃JC

胃JA

Thermal Resistance Junction to Case TO-220, TO-263, TO-262

Thermal Resistance Junction to Ambient TO-220, TO-263, TO-262 (Note 2)

Thermal Resistance Junction to Ambient TO-263, 1in copper pad area

1.0

C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

漏2002 Fairchild Semiconductor Corporation

FDB3652 / FDP3652 / FDI3652 Rev. B

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
800
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
100V
電流 - 連續(xù)漏極(Id) @ 25° C
61A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
16 毫歐 @ 61A，10V
Id 時(shí)的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
53nC @ 10V
輸入電容 (Ciss) @ Vds
2880pF @ 25V
功率 - 最大
150W
安裝類型
表面貼裝
封裝/外殼
TO-263-3，D²Pak（2 引線+接片），TO-263AB
供應(yīng)商設(shè)備封裝
TO-263AB
包裝
帶卷 (TR)
其它名稱
FDB3652-NDFDB3652TR

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