75V, 14A, 47m鈩?/div>
Features
Max r
DS(on)
= 47m鈩?at V
GS
= 10V, I
D
= 6A
100% UIL Tested
RoHS Compliant
Trench
廬
tm
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor鈥榮 advanced Power Trench
廬
process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
Synchronous rectifier
D
D
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
I
D
-Continuous (Silicon limited)
-Continuous
-Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
T
C
= 25擄C
T
A
= 25擄C
(Note 1a)
(Note 3)
T
C
= 25擄C
T
C
= 25擄C
T
A
= 25擄C
(Note 1a)
Parameter
Ratings
75
鹵20
14
22
6
40
54
41
3.1
-55 to +150
mJ
W
擄C
A
Units
V
V
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JC
R
胃JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3
40
擄C/W
Package Marking and Ordering Information
Device Marking
FDB3502
Device
FDB3502
Package
TO-263AB
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
漏2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
1
www.fairchildsemi.com