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FDB28N30 Datasheet

  • FDB28N30

  • N-Channel MOSFET

  • 314.47KB

  • 8頁(yè)

  • FAIRCHILD

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FDB28N30 N-Channel MOSFET
UniFET
TM
FDB28N30
N-Channel MOSFET
300V, 28A, 0.129惟
Features
鈥?R
DS(on)
= 0.108惟 ( Typ.)@ V
GS
= 10V, I
D
= 14A
鈥?Low gate charge ( Typ. 39nC)
鈥?Low C
rss
( Typ. 35pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
鈥?RoHS compliant
tm
June 2007
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
D
D
2
-PAK
G
S
G
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
Parameter
Ratings
300
鹵30
25
o
C)
o
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
-Continuous (T
C
=
- Pulsed
28
19
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
112
588
28
25
4.5
250
2.0
-55 to +150
300
-Continuous (T
C
= 100 C)
- Derate above 25 C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
C
C
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
*
R
胃JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient*
Thermal Resistance, Junction to Ambient
Ratings
0.5
40
62.5
o
Units
C/W
*When mounted on the minimum pad size recommended (PCB Mount)
漏2007 Fairchild Semiconductor Corporation
FDB28N30 Rev. A
1
www.fairchildsemi.com

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