500V, 11.5A, 0.7鈩?/div>
Features
鈥?R
DS(on)
= 0.59鈩?( Typ.)@ V
GS
= 10V, I
D
= 6A
鈥?Low gate charge ( Typ. 21nC)
鈥?Low C
rss
( Typ. 11pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improve dv/dt capability
鈥?RoHS compliant
UniFET
TM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild鈥檚 proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
D
G
S
D
2
-PAK
G
TO-263AB
S
FDB Series
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
Parameter
Ratings
500
鹵30
25
o
C)
o
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
-Continuous (T
C
=
- Pulsed
11.5
6.9
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
46
456
11.5
16.5
4.5
165
1.33
-55 to +150
300
-Continuous (T
C
= 100 C)
- Derate above 25 C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.75
62.5
Units
o
C/W
漏2007 Fairchild Semiconductor Corporation
FDB12N50F Rev. A
1
www.fairchildsemi.com
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