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FDB045AN08A0_06 Datasheet

  • FDB045AN08A0_06

  • N-Channel PowerTrench㈢ MOSFET 75V, 80A, 4.5mヘ

  • 11頁

  • FAIRCHILD

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FDB045AN08A0 N-Channel PowerTrench
廬
MOSFET
May 2006
tm
FDB045AN08A0
N-Channel PowerTrench
廬
MOSFET
75V, 80A, 4.5m惟
Features
鈥?r
DS(ON)
= 3.9m惟 (Typ.), V
GS
= 10V, I
D
= 80A
鈥?Q
g
(tot) = 92nC (Typ.), V
GS
= 10V
鈥?Low Miller Charge
鈥?Low Q
RR
Body Diode
鈥?UIS Capability (Single Pulse and Repetitive Pulse)
鈥?Qualified to AEC Q101
Formerly developmental type 82684
Applications
鈥?42V Automotive Load Control
鈥?Starter / Alternator Systems
鈥?Electronic Power Steering Systems
鈥?Electronic Valve Train Systems
鈥?DC-DC converters and Off-line UPS
鈥?Distributed Power Architectures and VRMs
鈥?Primary Switch for 24V and 48V systems
D
GATE
G
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
< 137
o
C, V
GS
= 10V)
o
Parameter
Ratings
75
鹵20
90
o
Units
V
V
A
A
A
mJ
W
W/
o
C
o
Continuous (T
amb
= 25 C, V
GS
= 10V, with R
胃JA
= 43 C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
19
Figure 4
600
310
2.0
-55 to 175
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
0.48
62
43
o
C/W
o
o
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
漏2006 Fairchild Semiconductor Corporation
FDB045AN08A0 Rev. A1
www.fairchildsemi.com

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