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FDB024N06 Datasheet

  • FDB024N06

  • N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.4mヘ

  • 615.54KB

  • 8頁(yè)

  • FAIRCHILD

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FDB024N06 N-Channel PowerTrench廬 MOSFET
July 2008
FDB024N06
60V, 265A, 2.4m鈩?/div>
Features
N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor鈥檚 advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
廬
tm
鈥?R
DS(on)
= 1.8m鈩?( Typ.) @ V
GS
= 10V, I
D
= 75A
鈥?Fast switching speed
鈥?Low gate charge
鈥?High performance trench technology for extremely low R
DS(on)
鈥?High power and current handling capability
鈥?RoHS compliant
Application
鈥?DC to DC convertors / Synchronous Rectification
D
D
G
G
S
D
2
-PAK
FDB Series
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
- Derate above 25 C
o
o
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (T
C
= 25
o
C, Silicon Limited)
- Continuous (T
C
= 100
o
C, Silicon Limited)
- Continuous (T
C
= 25
o
C, Package Limited)
- Pulsed
(Note 1)
(Note 2)
(Note 3)
Ratings
60
鹵20
265*
190*
120
1060
2531
3.5
395
2.6
-55 to +175
300
Units
V
V
A
A
A
A
mJ
V/ns
W
W/
o
C
o
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
C
C
*
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.38
62.5
Units
o
C/W
漏2008 Fairchild Semiconductor Corporation
FDB024N06 Rev. A3
1
www.fairchildsemi.com

FDB024N06 產(chǎn)品屬性

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 60V

  • 120A

  • 2.4 毫歐 @ 75A，10V

  • 4.5V @ 250µA

  • 226nC @ 10V

  • 14885pF @ 25V

  • 395W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D²PAK

  • 帶卷 (TR)

  • FDB024N06TR

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